PART |
Description |
Maker |
SID1010CM SID1F10CM SID1K10CM SID1010CXM SID1G10CM |
Infrared LEDs Infrared LED(For Remote Control)(红外LED(用于远程控制)) 红外发光二极管(对于遥控器)(红外发光二极管(用于远程控制) Infrared LEDs 5 mm, 1 ELEMENT, INFRARED LED, 940 nm
|
SANKEN[Sanken electric] Sanken Electric Co., Ltd.
|
OP290 OP290A OP290B OP290C OP291A OP291B OP291C OP |
4.95 mm, 1 ELEMENT, INFRARED LED, 890 nm Plastic Infrared Emitting Diode
|
OPTEK TECHNOLOGY INC OPTEK Technologies
|
NTE30001 |
2.5 mm, 1 ELEMENT, INFRARED LED, 950 nm Infrared Emitting Diode Bi.Directional
|
NTE Electronics, Inc. NTE[NTE Electronics]
|
SE1470 SE1470-003L |
1.57 mm, 1 ELEMENT, INFRARED LED, 880 nm AlGaAs Infrared Emitting Diode
|
Honeywell Accelerometers
|
QEC113 QEC112 |
GAAS INFRARED EMITTING DIODE 2.9 mm, 1 ELEMENT, INFRARED LED, 940 nm
|
QT[QT Optoelectronics]
|
LN59-LNA2702L LNA2702L LN59 |
GaAs Bi-directional Infrared Light Emitting Diodes 2.5 mm, 1 ELEMENT, INFRARED LED, 940 nm
|
Panasonic, Corp. Panasonic Corporation Panasonic Semiconductor
|
TLP831 |
PHOTO-INTERRUPTER INFRARED LED PHOTOTRANSISTOR PHOTOINTERRUPTER INFRARED LED PHOTOTRANSISTOR
|
Toshiba Semiconductor
|
TLN208 |
LED LAMP GaAlAs INFRARED EMITTER INFRARED LIGHT - EMISSION DIODE FOR STILL CAMERA LIGHT SOURCE FOR AUTO FOCUS
|
Toshiba Semiconductor Toshiba Corporation
|
BIR-BO13E4G-2 BIR-BO13V4V-2 BIR-BN03V4V-2 BIR-BO03 |
5 mm, 1 ELEMENT, INFRARED LED, 850 nm 4.98 mm, 1 ELEMENT, INFRARED LED, 850 nm 4.98 mm, 1 ELEMENT, INFRARED LED, 880 nm
|
American Bright Optoelectronics, Corp. AMERICAN BRIGHT OPTOELECTRONICS CORP
|
L279106 |
Infrared LED Small emission spot LED using current confined chip
|
Hamamatsu Corporation
|